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BAW56WT1 数据表(PDF) 1 Page - ON Semiconductor |
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BAW56WT1 数据表(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev. 5 Publication Order Number: BAW56WT1/D 1 BAW56WT1 Preferred Device Dual Switching Diode, Common Anode Features • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 200 1.6 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 625 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://onsemi.com SC−70 CASE 419 STYLE 4 Preferred devices are recommended choices for future use and best overall value. MARKING DIAGRAM 1 2 3 http://onsemi.com †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Device Package Shipping† ORDERING INFORMATION BAW56WT1 SC−70 3000/Tape & Reel BAW56WT1G SC−70 (Pb−Free) 3000/Tape & Reel ANODE 3 CATHODE 1 2 CATHODE A1 = Device Code M = Date Code* G = Pb−Free Package A1 M G G 1 (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. |
类似零件编号 - BAW56WT1 |
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类似说明 - BAW56WT1 |
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