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STB100NF04 数据表(PDF) 4 Page - STMicroelectronics |
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STB100NF04 数据表(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STB100NF04 - STP100NF04 4/17 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID=250µA, VGS=0 40 V IDSS Zero Gate Voltage Drain Current (VGS=0) VDS=Max Rating VDS=Max Rating Tc=125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS=0) VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 24 V RDS(on) Static Drain-source On Resistance VGS=10V, ID=50A 0.0043 0.0046 Ω Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit gfs Forward Transconductance VDS=15V, ID=50A 150 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=25V, f=1MHz,VGS=0 5100 1300 160 pF pF pF Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=32V, ID=120A VGS=10V 110 35 70 150 nC nC nC td(on) tr td(off) tf Turn-on Delay Time Rise time Turn-off delay Time Fall Time VDD=20V, ID=60A RG=4.7Ω, VGS=10V (see Figure 21) 35 220 80 50 ns ns ns ns |
类似零件编号 - STB100NF04 |
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类似说明 - STB100NF04 |
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