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数据搜索系统，热门电子元器件搜索 |
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ST4460FX 数据表(PDF) 4 Page - STMicroelectronics |
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ST4460FX 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 11 page  Electrical characteristics ST4460FX 4/11 2 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE =0) VCE = 1000V VCE = 1000V; TC= 125°C 100 500 µA µA ICEO Collector cut-off current (IB =0) VCE = 500V 250 µA VCEO(sus) (1) Collector-emitter sustaining voltage (IB =0) IC = 10mA 500 V VEBO Emitter-base voltage (Ic =0) IE = 10mA 9V VCE(sat) (1) 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % Collector-emitter saturation voltage IC = 6A IB = 1.2A IC = 8A IB = 1.6A IC = 10A IB = 2A 1 1.5 3 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 6A IB = 1.2A IC = 8A IB = 1.6A 1.5 1.6 V V hFE (1) DC current gain IC = 1.2A VCE = 5V IC = 6A VCE = 5V 28 10 45 ts tf Inductive load Storage time Fall time IC = 8A IB1 = 1.6A VBE(off) = -5V RBB = 0.4Ω VCL = 350V L = 200 µH 1.5 55 2.3 100 µs ns ts tf Inductive load Storage time Fall time IC = 8A IB1 = 1.6A VBE(off) = -5V RBB = 0.4Ω VCL = 350V L = 200 µH TC = 100°C 1.9 80 µs ns |
类似零件编号 - ST4460FX |
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类似说明 - ST4460FX |
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