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2N6035 数据表(PDF) 2 Page - ON Semiconductor |
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2N6035 数据表(HTML) 2 Page - ON Semiconductor |
2 / 6 page (PNP) 2N6034, 2N6035, 2N6036; (NPN) 2N6038, 2N6039 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6034 2N6035, 2N6038 2N6036, 2N6039 VCEO(sus) 40 60 80 − − − Vdc Collector−Cutoff Current (VCE = 40 Vdc, IB = 0) 2N6034 (VCE = 60 Vdc, IB = 0) 2N6035, 2N6038 (VCE = 80 Vdc, IB = 0) 2N6036, 2N6039 ICEO − − − 100 100 100 mA Collector−Cutoff Current (VCE = 40 Vdc, VBE(off) = 1.5 Vdc) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6035, 2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N6036, 2N6039 (VCE = 40 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6034 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6035, 2N6038 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N6036, 2N6039 ICEX − − − − − − 100 100 100 500 500 500 mA Collector−Cutoff Current (VCB = 40 Vdc, IE = 0) 2N6034 (VCB = 60 Vdc, IE = 0) 2N6035, 2N6038 (VCB = 80 Vdc, IE = 0) 2N6036, 2N6039 ICBO − − − 0.5 0.5 0.5 mAdc Emitter−Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE 500 750 100 − 15,000 − − Collector−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) VCE(sat) − − 2.0 3.0 Vdc Base−Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) VBE(sat) − 4.0 Vdc Base−Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) − 2.8 Vdc DYNAMIC CHARACTERISTICS Small−Signal Current−Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |hfe| 25 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6034, 2N6035, 2N6036 2N6038, 2N6039 Cob − − 200 100 pF *Indicates JEDEC Registered Data. |
类似零件编号 - 2N6035_06 |
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类似说明 - 2N6035_06 |
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