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2N3442 数据表(PDF) 3 Page - ON Semiconductor

部件名 2N3442
功能描述  High?뭁ower Industrial Transistors
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

2N3442 数据表(HTML) 3 Page - ON Semiconductor

  2N3442 Datasheet HTML 1Page - ON Semiconductor 2N3442 Datasheet HTML 2Page - ON Semiconductor 2N3442 Datasheet HTML 3Page - ON Semiconductor 2N3442 Datasheet HTML 4Page - ON Semiconductor  
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2N3442
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3
ACTIVE REGION SAFE OPERATING AREA INFORMATION
There are two limitations on the power−handling
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
IC − VCE limits of the transistor that must be observed
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
20
2.0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.2
5.0
20
100
200
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
dc
1.0 ms
10 ms
0.5
0.3
3.0
7.0 10
30
50 70
30 ms
50 ms
100 ms
TJ = 200°C
100 ms
Figure 2. 2N3442
400
0.1
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
4.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
10
40
20
100
60
TJ = 150°C
25°C
−55 °C
VCE = 4.0 V
6.0
10
200
7.0
Figure 4. Collector−Saturation Region
1.4
2.0
IB, BASE CURRENT (mA)
0
5.0
10
20
50
100
200
500
1.0k 2.0k
1.0
0.8
0.6
0.4
IC = 1.0 A
TJ = 25°C
4.0 A
8.0 A
1.2
0.2
2.0 A


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