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2N3442 数据表(PDF) 3 Page - ON Semiconductor |
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2N3442 数据表(HTML) 3 Page - ON Semiconductor |
3 / 4 page 2N3442 http://onsemi.com 3 ACTIVE REGION SAFE OPERATING AREA INFORMATION There are two limitations on the power−handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 20 2.0 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.2 5.0 20 100 200 CURRENT LIMIT THERMAL LIMIT @ TC = 25°C SINGLE PULSE SECOND BREAKDOWN LIMIT dc 1.0 ms 10 ms 0.5 0.3 3.0 7.0 10 30 50 70 30 ms 50 ms 100 ms TJ = 200°C 100 ms Figure 2. 2N3442 400 0.1 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (AMP) 4.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10 40 20 100 60 TJ = 150°C 25°C −55 °C VCE = 4.0 V 6.0 10 200 7.0 Figure 4. Collector−Saturation Region 1.4 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 50 100 200 500 1.0k 2.0k 1.0 0.8 0.6 0.4 IC = 1.0 A TJ = 25°C 4.0 A 8.0 A 1.2 0.2 2.0 A |
类似零件编号 - 2N3442 |
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类似说明 - 2N3442 |
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