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STD65N55F3 数据表(PDF) 3 Page - STMicroelectronics |
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STD65N55F3 数据表(HTML) 3 Page - STMicroelectronics |
3 / 13 page STD65N55F3 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS=0) 55 V VGS Gate-Source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 65 A ID Drain current (continuous) at TC = 100°C 46 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 260 A PTOT Total dissipation at TC = 25°C 110 W Derating factor 0.73 W/°C dv/dt (2) 2. ISD ≤65A, di/dt ≤300A/µs, VDD < V(BR)DSS. Tj < Tjmax Peak diode recovery voltage slope 11 V/ns EAS (3) 3. Starting Tj = 25°C, Id = 32A, Vdd = 25V Single pulse avalanche energy 390 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu. Thermal resistance junction-pcb max 50 °C/W Tl Maximum lead temperature for soldering purpose 275 °C |
类似零件编号 - STD65N55F3 |
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类似说明 - STD65N55F3 |
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