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M27C256B-10C1TR 数据表(PDF) 11 Page - STMicroelectronics |
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M27C256B-10C1TR 数据表(HTML) 11 Page - STMicroelectronics |
11 / 24 page M27C256B Device operation 11/24 2.10 Erasure operation (applies for UV EPROM) The erasure characteristics of the M27C256B is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27C256B in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the M27C256B is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27C256B window to prevent unintentional erasure. The recommended erasure procedure for the M27C256B is exposure to short wave ultraviolet light which has wavelength 2537Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 µW/cm2 power rating. The M27C256B should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure. Table 2. Operating modes(1) 1. X = VIH or VIL, VID = 12V ± 0.5V. Mode E G A9 VPP Q7-Q0 Read VIL VIL XVCC Data Out Output Disable VIL VIH XVCC Hi-Z Program VIL Pulse VIH XVPP Data In Verify VIH VIL XVPP Data Out Program Inhibit VIH VIH XVPP Hi-Z Standby VIH XX VCC Hi-Z Electronic Signature VIL VIL VID VCC Codes Table 3. Electronic signature Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data Manufacturer’s Code VIL 00 10 00 00 20h Device Code VIH 10 00 11 01 8Dh |
类似零件编号 - M27C256B-10C1TR |
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类似说明 - M27C256B-10C1TR |
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