tm

©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

January 2007

FFPF10H60S Rev. A

FFPF10H60S

Hyperfast Recovery Power Rectifier

Features

• High Reverse Voltage and High Reliability

• Avalanche Energy Rated

Applications

• General Purpose

• Switching Mode Power Supply

• Free-wheeling diode for motor application

• Power switching circuits

General Description

silicon nitride passivated ion-implanted epitaxial planar con-

struction.

This device is intended for use as freewheeling/clamping rectifi-

ers in a variety of switching power supplies and other power

swithching applications. Its low stored charge and hyperfast soft

recovery minimize ringing and electrical noise in many power

switching circuits reducing power loss in the switching transis-

tors.

Pin Assignments

Absolute Maximum Ratings

Thermal Characteristics

Package Marking and Ordering

1. Cathode

2. Anode

TO-220F-2L

Marking:F10H60S

1

1. Cathode

2. Anode

2

12

Symbol

Parameter

Value

Units

Peak Repetitive Reverse Voltage

600

V

Working Peak Reverse Voltage

600

V

DC Blocking Voltage

600

V

Average Rectified Forward Current

A

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

100

A

Operating Junction and Storage Temperature

- 65 to +150

°C

Symbol

Parameter

Max

Units

Maximum Thermal Resistance, Junction to Case

3.4

°C/W

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

F10H60S

FFPF10H60STU

TO-220F

-

-

50

Information