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2N2605 数据表(PDF) 1 Page - Microsemi Corporation |
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2N2605 数据表(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level 2N2604 2N2605 JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage VCBO 80 70 Vdc Collector-Emitter Voltage VCEO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 30 mAdc Total Power Dissipation @ TA = +25 0C(1) PT 400 mW/ 0C Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case RθJC 0.437 0C/mW 1) Derate linearly 2.28 mW/ 0C above TA = +250C TO-46* (TO-206AB) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10 µAdc 2N2604 2N2605 V(BR)CBO 80 70 Vdc Collector-Emitter Breakdown Voltage IC = 10 mAdc V(BR)CEO 60 Vdc Emitter-Base Breakdown Current IE = 10 µAdc V(BR)EBO 6.0 Vdc Collector-Base Cutoff Current VCB = 50 Vdc ICBO 10 ηAdc Emitter-Base Cutoff Current VEB = 5.0 Vdc IEBO 2.0 ηAdc Collector-Emitter Cutoff Current VCE = 50 Vdc ICES 10 ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
类似零件编号 - 2N2605 |
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类似说明 - 2N2605 |
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