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BU4506AX 数据表(PDF) 1 Page - NXP Semiconductors |
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BU4506AX 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4506AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 5 A I CM Collector current peak value - 8 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W V CEsat Collector-emitter saturation voltage I C = 3 A; IB = 0.75 A - 3.0 V I Csat Collector saturation current f = 16 kHz 3.0 - A t f Fall time I Csat = 3.0 A;f = 16 kHz 300 450 ns PINNING - SOT399 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 1500 V V CEO Collector-emitter voltage (open base) - 800 V I C Collector current (DC) - 5 A I CM Collector current peak value - 8 A I B Base current (DC) - 3 A I BM Base current peak value - 5 A -I BM Reverse base current peak value 1 -4 A P tot Total power dissipation T hs ≤ 25 ˚C - 45 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to heatsink with heatsink compound - 2.8 K/W R th j-a Junction to ambient in free air 32 - K/W case 12 3 b c e 1 Turn-off current. July 1999 1 Rev 1.000 |
类似零件编号 - BU4506AX |
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类似说明 - BU4506AX |
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