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BT137B 数据表(PDF) 2 Page - NXP Semiconductors |
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BT137B 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Triacs BT137B series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 2.0 K/W junction to mounting base half cycle - - 2.4 K/W R th j-a Thermal resistance minimum footprint, FR4 board - 55 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT137B- ... ...F ...G I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 11 35 25 50 mA T2- G+ - 30 70 70 100 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 7 30 30 45 mA T2+ G- - 16 45 45 60 mA T2- G- - 5 30 30 45 mA T2- G+ - 7 45 45 60 mA I H Holding current V D = 12 V; IGT = 0.1 A - 5 20 20 40 mA V T On-state voltage I T = 10 A - 1.3 1.65 V V GT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V V D = 400 V; IT = 0.1 A; 0.25 0.4 - V T j = 125 ˚C I D Off-state leakage current V D = VDRM(max); - 0.1 0.5 mA T j = 125 ˚C DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BT137B- ... ...F ...G dV D/dt Critical rate of rise of V DM = 67% VDRM(max); 100 50 200 250 - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dV com/dt Critical rate of change of V DM = 400 V; Tj = 95 ˚C; - - 10 20 - V/ µs commutating voltage I T(RMS) = 8 A; dI com/dt = 3.6 A/ms; gate open circuit t gt Gate controlled turn-on I TM = 12 A; VD = VDRM(max);- - - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs October 1997 2 Rev 1.200 |
类似零件编号 - BT137B |
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类似说明 - BT137B |
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