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KM62U256DLG-7L 数据表(PDF) 6 Page - Samsung semiconductor

部件名 KM62U256DLG-7L
功能描述  32Kx8 bit Low Power and Low Voltage CMOS Static RAM
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM62U256DLG-7L 数据表(HTML) 6 Page - Samsung semiconductor

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KM62V256D, KM62U256D Family
CMOS SRAM
Revision 1.0
November 1997
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
CS
Address
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ
tRC
tOE
tCO


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