NILMS4501N datasheet(4/9 Pages) ONSEMI

部件名	NILMS4501N

功能描述	Power MOSFET with Current Mirror FET

Download	9 Pages

Scroll/Zoom	100%

制造商	ONSEMI [ON Semiconductor]

网页	http://www.onsemi.com

标志

4 / 9 page

NILMS4501N

http://onsemi.com

4

TYPICAL ELECTRICAL CHARACTERISTICS

ID, DRAIN CURRENT (AMPS)

6

2

0.025

0.02

0.015

0.01

0.005

0.014

0

5

0

4

1.6

2

0.8

1.2

0.4

0

10

15

2

1

0

0.8

0.9

1

0.5

0.6

0.7

0.3

0.4

0.2

0.1

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. On−Region Characteristics

Figure 3. Transfer Characteristics

Figure 4. On−Resistance versus

Drain Current and Temperature

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance versus

Drain Current and Temperature

Figure 6. On−Resistance versus Gate Voltage

and Temperature

VDS =10 V

VGS = 4.5 V

TJ = − 55°C

ID = 10 A

4

3

6

5

VGS = 10 V

4.5 V

3.0 V

2.8 V

TJ = 125°C

TJ = 175°C

510

15

20

0.002

0.004

0.006

0.008

0.010

0.012

3

7

510

TJ = 25°C

TJ = 175°C

TJ = −55°C

2.6 V

2.4 V

2.2 V

20

TJ = 25°C

0.016

0.018

0.024

TJ = 125°C

0

0.03

10

5

0

2

1

1.5

0.5

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

20

15

25

VGS = 10 V

4.6 V

3.0 V

3.2 V

2.6 V

2.4 V

2.2 V

0.020

0.022

ID, DRAIN CURRENT (AMPS)

0.014

0

VGS = 10 V

510

15

20

0.002

0.004

0.006

0.008

0.010

0.012

TJ = 25°C

TJ = 175°C

TJ = −55°C

0.016

0.018

TJ = 125°C

0

58

9

TJ = 25°C

TJ = 175°C

TJ = −55°C

TJ = 125°C

3.6

2.8

3.2

2.4

2.8 V

3.6 V

4.0 V

类似说明 - NILMS4501N

制造商	部件名	数据表	功能描述
Zetex Semiconductors	ZDS1009	124Kb / 5P	COMPLEMENTARY CURRENT MIRROR
Maxim Integrated Produc...	DS3920_1112	1Mb / 7P	Fast Current Mirror Rev 2; 12/11
	DS3923	817Kb / 15P	High-Speed Current Mirror Rev 1; 8/14
	DS3923	774Kb / 15P	High-Speed Current Mirror with Sample/Hold Output 2015
Diodes Incorporated	ZDS1009	121Kb / 5P	SM-8 COMPLEMENTARY CURRENT MIRROR
ON Semiconductor	NIMD6302R2	90Kb / 9P	HDPlus Dual N?묬hannel Self?뭦rotected Field Effect Transistors with 1:200 Current Mirror FET March, 2006 ??Rev. 4
ON Semiconductor	NIMD6302R2	97Kb / 12P	HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET October, 2002 ??Rev. 3
Infineon Technologies A...	TLE8203E	672Kb / 33P	Mirror Power IC Rev. 1.0, February 2009
Texas Instruments	TPS61391	552Kb / 23P	[Old version datasheet] TPS61391 85-VOUT Boost Converter with Current Mirror Integrated
Texas Instruments	TPS61390	1Mb / 27P	[Old version datasheet] 85-VOUT Boost Converter With Current Mirror and Sample / Hold