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BF1206F 数据表(PDF) 3 Page - NXP Semiconductors |
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BF1206F 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 20 page BF1206F_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 30 January 2006 3 of 20 Philips Semiconductors BF1206F Dual N-channel dual gate MOSFET 4. Marking 5. Limiting values [1] Tsp is the temperature at the solder point of the source lead. 6. Thermal characteristics Table 4: Marking Type number Marking code BF1206F 2N Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage (DC) - 6 V ID drain current (DC) - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation Tsp ≤ 107 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Fig 1. Power derating curve Tsp (˚C) 0 200 150 50 100 001aac193 100 150 50 200 250 Ptot (mW) 0 Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-sp) thermal resistance from junction to solder point 240 K/W |
类似零件编号 - BF1206F |
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类似说明 - BF1206F |
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