BF1206F datasheet(10/20 Pages) PHILIPS

部件名	BF1206F

功能描述	Dual N-channel dual gate MOSFET

Download	20 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

10 / 20 page

BF1206F_1

Product data sheet

Rev. 01 — 30 January 2006

10 of 20

Philips Semiconductors

BF1206F

Dual N-channel dual gate MOSFET

8.1.2 Scattering parameters for ampliﬁer A

8.2 Noise data for ampliﬁer A

8.3 Dynamic characteristics for ampliﬁer B

Table 9:

Scattering parameters for ampliﬁer A

VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA; VDS(B) =0V; VG1-S(B) =0V; Tamb = 25 °C; typical values.

f (MHz)

s11

s21

s12

s22

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

Magnitude

(ratio)

Angle

(deg)

50

0.9923

−4.11

2.18

174.68

0.00038

102.27

0.995

−1.83

100

0.9930

−8.29

2.18

169.51

0.00080

85.65

0.996

−3.75

200

0.9877

−16.41

2.16

159.20

0.00161

80.93

0.995

−7.49

300

0.9802

−24.48

2.12

149.04

0.00233

76.76

0.994

−11.22

400

0.9705

−32.34

2.07

138.99

0.00303

73.21

0.992

−14.96

500

0.9596

−39.91

2.01

129.15

0.00354

69.83

0.989

−18.68

600

0.9483

−47.34

1.94

119.45

0.00394

67.19

0.987

−22.39

700

0.9361

−54.59

1.87

109.95

0.00426

65.26

0.984

−26.11

800

0.9239

−61.64

1.79

100.69

0.00453

63.89

0.981

−29.82

900

0.9129

−68.28

1.72

91.66

0.00457

64.06

0.979

−33.57

1000

0.9018

−74.57

1.64

82.86

0.00456

65.60

0.976

−37.31

Table 10:

Noise data for ampliﬁer A

VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA.

f (MHz)

NFmin (dB)

Γopt

rn (ratio)

ratio

(deg)

400

1.0

0.78

26

0.84

800

1.1

0.87

53

0.87

Table 11:

Dynamic characteristics for ampliﬁer B

Common source; Tamb =25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA.

Symbol Parameter

Conditions

Min

Typ

Max Unit

|yfs|

forward transfer admittance

Tj =25 °C

-

22

-

mS

Ciss(G1)

input capacitance at gate1

f = 100 MHz

[1] -

1.7

2.2

pF

Ciss(G2)

input capacitance at gate2

f = 100 MHz

[1] -

4.0

-

pF

Coss

output capacitance

f = 100 MHz

[1] -

0.85

-

pF

Crss

reverse transfer capacitance f = 100 MHz

[1] -30

45

fF

Gtr

transducer power gain

BS =BS(opt); BL =BL(opt)

[1]

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

-

32

-

dB

f = 400 MHz; GS = 2 mS; GL =1mS

-

29

-

dB

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

-

25

-

dB

NF

noise ﬁgure

f = 11 MHz; GS = 20 mS; BS = 0

-

4.5

-

dB

f = 400 MHz; YS = YS(opt)

-

0.9

1.5

dB

f = 800 MHz; YS = YS(opt)

-

1.0

1.6

dB

类似零件编号 - BF1206F

制造商	部件名	数据表	功能描述
Quanzhou Jinmei Electro...	BF1206F	213Kb / 17P	Dual N-channel dual gate MOSFET
Quanzhou Jinmei Electro...	BF1206F_2015	213Kb / 17P	Dual N-channel dual gate MOSFET

More results

类似说明 - BF1206F

制造商	部件名	数据表	功能描述
NXP Semiconductors	BF1214	211Kb / 18P	Dual N-channel dual gate MOSFET Rev. 01-30 October 2007
	BF1208D	253Kb / 22P	Dual N-channel dual gate MOSFET Rev. 01-16 May 2007
	BF1210	252Kb / 21P	Dual N-channel dual gate MOSFET Rev. 01-25 October 2006
	BF1208D	262Kb / 22P	Dual N-channel dual gate MOSFET Rev. 01-16 May 2007
Quanzhou Jinmei Electro...	BF1208D	262Kb / 22P	Dual N-channel dual gate MOSFET
Quanzhou Jinmei Electro...	BF1214	218Kb / 18P	Dual N-channel dual gate MOSFET
NXP Semiconductors	BF1208	167Kb / 22P	Dual N-channel dual gate MOSFET Rev. 01-16 March 2005
Quanzhou Jinmei Electro...	BF1208_2015	175Kb / 22P	Dual N-channel dual gate MOSFET
	BF1206F	213Kb / 17P	Dual N-channel dual gate MOSFET
	BF1210	260Kb / 21P	Dual N-channel dual gate MOSFET
	BF1207_2015	168Kb / 22P	Dual N-channel dual gate MOSFET