数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

AM49DL320BGB701 数据表(PDF) 2 Page - SPANSION

部件名 AM49DL320BGB701
功能描述  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Download  64 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  SPANSION [SPANSION]
网页  http://www.spansion.com
标志 SPANSION - SPANSION

AM49DL320BGB701 数据表(HTML) 2 Page - SPANSION

  AM49DL320BGB701 Datasheet HTML 1Page - SPANSION AM49DL320BGB701 Datasheet HTML 2Page - SPANSION AM49DL320BGB701 Datasheet HTML 3Page - SPANSION AM49DL320BGB701 Datasheet HTML 4Page - SPANSION AM49DL320BGB701 Datasheet HTML 5Page - SPANSION AM49DL320BGB701 Datasheet HTML 6Page - SPANSION AM49DL320BGB701 Datasheet HTML 7Page - SPANSION AM49DL320BGB701 Datasheet HTML 8Page - SPANSION AM49DL320BGB701 Datasheet HTML 9Page - SPANSION Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 64 page
background image
PRELIMINARY
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 26644
Rev: A Amendment/+1
Issue Date: July 19, 2002
Refer to AMD’s Website (www.amd.com) for the latest information.
Am49DL320BG
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Am29DL320G 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM with Page Mode
DISTINCTIVE CHARACTERISTICS
MCP Features
s Power supply voltage of 2.7 to 3.3 volt
s High performance
— Access time as fast as 70 ns
s Package
— 73-Ball FBGA
s Operating Temperature
— –40°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
s Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
s Flexible Bank
 architecture
— Read may occur in any of the three banks not being written
or erased.
— Four banks may be grouped by customer to achieve desired
bank divisions.
s Manufactured on 0.17 µm process technology
s SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
— Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable
as factory locked through autoselect function. ExpressFlash
option allows entire sector to be available for
factory-secured data
— Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
s Zero Power Operation
— Sophisticated power management circuits reduce power
consumed during inactive periods to nearly zero.
s Boot sectors
— Top and bottom boot sectors in the same device
s Compatible with JEDEC standards
— Pinout and software compatible with single-power-supply
flash standard
PERFORMANCE CHARACTERISTICS
s High performance
— Access time as fast as 70 ns
— Program time: 4 µs/word typical utilizing Accelerate function
s Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
s Minimum 1 million write cycles guaranteed per sector
s 20 year data retention at 125
°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
s Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
s Supports Common Flash Memory Interface (CFI)
s Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow
programming/erasing in same bank
s Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
s Unlock Bypass Program command
— Reduces overall programming time when issuing multiple
program command sequences
HARDWARE FEATURES
s Any combination of sectors can be erased
s Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase cycle
completion
s Hardware reset pin (RESET#)
— Hardware method of resetting the internal state machine to
the read mode
s WP#/ACC input pin
— Write protect (WP#) function allows protection of two outermost
boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program timing
s Sector protection
— Hardware method of locking a sector, either in-system or
using programming equipment, to prevent any program or
erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
pSRAM Features
s Power dissipation
— Operating: 40 mA maximum
— Standby: 70 µA maximum
— Deep power-down standby: 5 µA
s CE1s# and CE2s Chip Select
s Power down features using CE1s# and CE2s
s Data retention supply voltage: 2.7 to 3.3 volt
s Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
s 8-word page mode access


类似零件编号 - AM49DL320BGB701

制造商部件名数据表功能描述
logo
Advanced Micro Devices
AM49DL320BGB701S AMD-AM49DL320BGB701S Datasheet
1Mb / 64P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
AM49DL320BGB701T AMD-AM49DL320BGB701T Datasheet
1Mb / 64P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
More results

类似说明 - AM49DL320BGB701

制造商部件名数据表功能描述
logo
SPANSION
AM49DL32XBG SPANSION-AM49DL32XBG Datasheet
1Mb / 64P
   Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM42DL640AG SPANSION-AM42DL640AG Datasheet
916Kb / 62P
   Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only
logo
Advanced Micro Devices
AM29DL322C AMD-AM29DL322C Datasheet
691Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D Datasheet
1Mb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DL32XG SPANSION-AM29DL32XG_06 Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DL320G AMD-AM29DL320G Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL32XG AMD-AM29DL32XG Datasheet
1,019Kb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D_05 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
S29JL032H SPANSION-S29JL032H_09 Datasheet
1Mb / 61P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
logo
Advanced Micro Devices
AM49DL32XBG AMD-AM49DL32XBG Datasheet
1Mb / 64P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com