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FQPF45N03L 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQPF45N03L 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 175℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ V SD, Source-Drain voltage [V] 02 468 10 10 -1 10 0 10 1 10 2 175℃ 25℃ -55℃ ※ Notes : 1. V DS = 15V 2. 250μ s Pulse Test V GS, Gate-Source Voltage [V] 10 -1 10 0 10 1 10 1 10 2 V GS Top : 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25 ℃ V DS, Drain-Source Voltage [V] 0 50 100 150 200 250 300 0 10 20 30 40 50 V GS = 5V V GS = 10V ※ Note : T J = 25 ℃ I D, Drain Current [A] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 15V V DS = 24V ※ Note : I D = 45A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
类似零件编号 - FQPF45N03L |
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类似说明 - FQPF45N03L |
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