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SI3861BDV 数据表(PDF) 1 Page - Vishay Siliconix |
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SI3861BDV 数据表(HTML) 1 Page - Vishay Siliconix |
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1 / 6 page  FEATURES D 4.5-V Rated D ESD Protected: 3000 V D 105-mW Low rDS(on) TrenchFETr D 4.5 to 20-V Input D 1.5 to 8 -V Logic Level Control D Low Profile, Small Footprint TSOP-6 Package D 3000-V ESD Protection On Input Switch, VON/OFF D Adjustable Slew-Rate RoHS COMPLIANT Si3861BDV Vishay Siliconix New Product Document Number: 73343 S-51015—Rev. A, 23-May-05 www.vishay.com 1 Load Switch with Level-Shift PRODUCT SUMMARY VDS2 (V) rDS(on) (W) ID (A) 0.075 @ VIN = 10 V "2.3 4.5 to 20 0.120 @ VIN = 5.0 V "1.9 0.145 @ VIN = 4.5 V "1.7 DESCRIPTION The Si3861BDV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3861DV operates on supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A. APPLICATION CIRCUITS Note: For R2 switching variations with other VIN/R1 combinations See Typical Characteristics VOUT GND LOAD VIN ON/OFF R2 R2 1 2, 3 C1 6 4 6 5 R1 Q1 Q2 Si3861BDV Co Ci 0 2 4 6 8 10 0 246 8 10 12 R2 (kW) Switching Variation R2 @ VIN = 5 V, R1 = 20 kW IL = 1 A VON/OFF = 3 V Ci = 10 mF Co = 1 mF tf td(off) tr td(on) COMPONENTS R1 Pull-Up Resistor Typical 10 kW to 1 mW* R2 Optional Slew-Rate Control Typical 0 to 100 kW* C1 Optional Slew-Rate Control Typical 1000 pF *Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on. The Si3861BDV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. |
类似零件编号 - SI3861BDV |
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类似说明 - SI3861BDV |
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