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BAS101 数据表(PDF) 1 Page - NXP Semiconductors |
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BAS101 数据表(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package. 1.2 Features 1.3 Applications 1.4 Quick reference data [1] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA. BAS101; BAS101S High-voltage switching diodes Rev. 01 — 8 September 2006 Product data sheet Table 1. Product overview Type number Package Configuration Philips JEITA BAS101 SOT23 - single BAS101S SOT23 - dual series I High switching speed: trr ≤ 50 ns I Low capacitance: Cd ≤ 2pF I Low leakage current I Reverse voltage: VR ≤ 300 V I Repetitive peak reverse voltage: VRRM ≤ 300 V I Small SMD plastic package I High-speed switching I Voltage clamping I High-voltage switching I Reverse polarity protection Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per diode IF forward current - - 200 mA IR reverse current VR = 250 V - - 150 nA VR reverse voltage - - 300 V trr reverse recovery time [1] --50 ns |
类似零件编号 - BAS101 |
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类似说明 - BAS101 |
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