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BF545A 数据表(PDF) 8 Page - NXP Semiconductors |
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BF545A 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 12 page 1996 Jul 29 8 Philips Semiconductors Product specification N-channel silicon junction field-effect transistors BF545A; BF545B; BF545C Fig.13 Drain current as a function of gate-source voltage; typical values for BF545A. VDS = 15 V; Tj =25 °C. handbook, halfpage MBB461 0 −3 −2 −1 103 102 10 1 10−1 10−2 10−3 ID ( µA) VGS (V) Fig.14 Drain current as a function of gate-source voltage; typical values for BF545B. VDS = 15 V; Tj =25 °C. handbook, halfpage MBB458 0 −6 −4 −2 103 102 10 1 10−1 10−2 10−3 ID ( µA) VGS (V) Fig.15 Drain current as a function of gate-source voltage; typical values for BF545C. VDS = 15 V; Tj =25 °C. handbook, halfpage 0 −8 −6 −4 −2 103 102 10 1 10−1 10−2 10−3 MBB455 ID ( µA) VGS (V) Fig.16 Gate current as a function of drain-gate voltage; typical values. ID = 10 mA only for BF545B and BF545C; Tj =25 °C. handbook, halfpage 20 10 0 −102 −10 −1 −10−1 −10−2 MBB454 IG (pA) VDG (V) IGSS 1 mA ID = 10 mA 0.1 mA |
类似零件编号 - BF545A |
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类似说明 - BF545A |
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