数据搜索系统,热门电子元器件搜索 |
|
IRF640T 数据表(PDF) 1 Page - STMicroelectronics |
|
IRF640T 数据表(HTML) 1 Page - STMicroelectronics |
1 / 12 page October 2006 Rev 1 1/12 12 ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Applications ■ Switching application Internal schematic diagram General features Type VDSS RDS(on) ID IRF640T 200V <0.16 Ω 15A 1 2 3 TO-220 IRF640T N-channel 200V - 0.15 Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET www.st.com Order codes Part number Marking Package Packaging IRF640T IRF640T TO-220 Tube |
类似零件编号 - IRF640T |
|
类似说明 - IRF640T |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |