BF410C datasheet(2/6 Pages) PHILIPS

部件名	BF410C

功能描述	N-channel silicon field-effect transistors

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

2 / 6 page

December 1990

2

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF410A to D

DESCRIPTION

Asymmetrical N-channel planar

epitaxial junction field-effect

transistors in a plastic TO-92 variant;

intended for applications up to the

VHF range.

These FETs can be supplied in four

IDSS groups. Special features are the

low feedback capacitance and the low

noise figure. Thanks to these special

features the BF410 is very suitable for

applications such as the RF stages in

FM portables (type A), car radios

(type B) and mains radios (type C) or

the mixer stage (type D).

PINNING - TO-92 VARIANT

1

= drain

2

= source

3

= gate

Fig.1 Simplified outline and symbol

handbook, halfpage

1

3

2

MAM257

s

d

g

QUICK REFERENCE DATA

Drain-source voltage

VDS

max.

20

V

Drain current (DC or average)

ID

max.

30

mA

Total power dissipation

up to Tamb =75 °CPtot

max.

300

mW

BF410A

B

C

D

Drain current

VDS = 10 V; VGS =0

IDSS

min.

0.7

2.5

6

10 mA

max.

3.0

7.0

12

18 mA

Transfer admittance

VDS = 10 V; VGS = 0; f = 1 kHz

 yfs 

min.

2.5

4

6

7 mS

Feedback capacitance

VDS = 10 V; VGS =0

Crs

typ.

0.5

−− pF

VDS = 10 V; ID = 5 mA

Crs

typ.

−−

0.5

0.5 pF

Noise ﬁgure at optimum source admittance

GS = 1 mS; −BS = 3 mS; f = 100 MHz

VDS = 10 V; VGS = 0

F

typ.

1.5

−− dB

VDS = 10 V; ID = 5 mA

F

typ.

−−

1.5

1.5 dB

类似零件编号 - BF410C

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BF410C	54Kb / 3P	LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS

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