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BF1107 数据表(PDF) 4 Page - NXP Semiconductors |
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BF1107 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1999 May 14 4 Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W Fig.3 Losses (on-state) as a function of frequency; typical values. VSG =VDG =0. (1) RS =RL =50 Ω. (2) RS =RL =75 Ω. handbook, halfpage 0 −5 −4 −3 −2 −1 MBK831 10 102 103 f (MHz) (2) (1) S21(on) 2 (dB) Fig.4 Isolation (off-state) as a function of frequency; typical values. VSG =VDG =5V. (1) RS =RL =50 Ω. (2) RS =RL =75 Ω. handbook, halfpage 0 −60 −40 −20 MBK832 10 102 103 f (MHz) (2) (1) S21(off) 2 (dB) Fig.5 Input and output return losses (on-state) as function of frequency; typical values. VSG =VDG =0. (1) RS =RL =50 Ω. (2) RS =RL =75 Ω. handbook, halfpage 0 −25 −20 −15 −10 −5 MBK833 10 102 103 f (MHz) (2) RL (dB) (1) |
类似零件编号 - BF1107 |
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类似说明 - BF1107 |
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