BCW69 datasheet(2/8 Pages) PHILIPS

部件名	BCW69

功能描述	PNP general purpose transistors

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制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

2 / 8 page

1999 Apr 19

2

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistors

BCW69; BCW70

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 45 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complements: BCW71 and BCW72.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

MARKING CODE(1)

BCW69

H1

∗

BCW70

H2

∗

PINNING

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−50

V

VCEO

collector-emitter voltage

open base; IC = −2mA

−−45

V

VEBO

emitter-base voltage

open collector

−−5V

IC

collector current (DC)

−−100

mA

ICM

peak collector current

−−200

mA

IBM

peak base current

−−200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

−

250

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

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