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BCW33 数据表(PDF) 3 Page - NXP Semiconductors |
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BCW33 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Apr 13 3 Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32; BCW33 THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit. CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =32V −− 100 nA IE = 0; VCB =32V; Tj = 100 °C −− 10 µA IEBO emitter cut-off current IC = 0; VEB =5V −− 100 nA hFE DC current gain IC =10 µA; VCE =5V BCW31 − 90 − BCW32 − 150 − BCW33 − 270 − DC current gain IC = 2 mA; VCE =5V BCW31 110 − 220 BCW32 200 − 450 BCW33 420 − 800 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 120 250 mV IC = 50 mA; IB = 2.5 mA − 210 − mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 750 − mV IC = 50 mA; IB = 2.5 mA − 850 − mV VBE base-emitter voltage IC = 2 mA; VCE = 5 V 550 − 700 mV Cc collector capacitance IE =Ie = 0; VCB =10V; f=1MHz − 2.5 − pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −− MHz F noise figure IC = 200 µA; VCE =5V; RS =2kΩ; f = 1 kHz; B = 200 Hz −− 10 dB |
类似零件编号 - BCW33 |
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类似说明 - BCW33 |
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