BDX33A datasheet(2/6 Pages) BOURNS

部件名	BDX33A

功能描述	NPN SILICON POWER DARLINGTONS

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制造商	BOURNS [Bourns Electronic Solutions]

网页	http://www.bourns.com

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2 / 6 page

BDX33, BDX33A, BDX33B, BDX33C, BDX33D

NPN SILICON POWER DARLINGTONS

2

PRODU CT

INFORMA TION

AUGUST 1993 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 100 mA

IB = 0

(see Note 3)

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

45

60

80

100

120

V

ICEO

Collector-emitter

cut-off current

VCE = 30 V

VCE = 40 V

VCE = 50 V

VCE = 60 V

VCE = 30 V

VCE = 40 V

VCE = 50 V

VCE = 60 V

IB =0

TC = 100°C

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

0.5

10

mA

ICBO

Collector cut-off

current

VCB = 45 V

VCB = 60 V

VCB = 80 V

VCB = 100 V

VCB = 120 V

VCB = 45 V

VCB = 60 V

VCB = 80 V

VCB = 100 V

VCB = 120 V

IE =0

TC = 100°C

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

1

5

mA

IEBO

Emitter cut-off

current

VEB =

5 V

IC =0

10

mA

hFE

Forward current

transfer ratio

VCE =

3 V

VCE =

3 V

VCE =

3 V

VCE =

3 V

VCE =

3 V

IC =4 A

IC =3 A

(see Notes 3 and 4)

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

750

VBE(on)

Base-emitter

voltage

VCE =

3 V

VCE =

3 V

VCE =

3 V

VCE =

3 V

VCE =

3 V

IC =4 A

IC =3 A

(see Notes 3 and 4)

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

2.5

V

VCE(sat)

Collector-emitter

saturation voltage

IB =

8 mA

IB =

8 mA

IB =

6 mA

IB =

6 mA

IB =

6 mA

IC = 4 A

IC = 3 A

(see Notes 3 and 4)

BDX33

BDX33A

BDX33B

BDX33C

BDX33D

2.5

V

VEC

Parallel diode

forward voltage

IE =

8 A

IB = 0

4

V

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