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BAX18 数据表(PDF) 2 Page - NXP Semiconductors |
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BAX18 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1996 Sep 18 2 Philips Semiconductors Product specification General purpose diode BAX18 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 2 A. APPLICATIONS • Rectifier applications. DESCRIPTION The BAX18 is a general purpose diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. Fig.1 Simplified outline (SOD27; DO-35) and symbol. The diode is type branded. handbook, halfpage MAM246 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 500 mA IFRM repetitive peak forward current − 2000 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 55 A t = 100 µs − 15 A t = 10 ms − 9A Ptot total power dissipation Tamb =25 °C; note 1 − 450 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C |
类似零件编号 - BAX18 |
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类似说明 - BAX18 |
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