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BAX14 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BAX14
功能描述  General purpose diode
Download  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BAX14 数据表(HTML) 2 Page - NXP Semiconductors

  BAX14 Datasheet HTML 1Page - NXP Semiconductors BAX14 Datasheet HTML 2Page - NXP Semiconductors BAX14 Datasheet HTML 3Page - NXP Semiconductors BAX14 Datasheet HTML 4Page - NXP Semiconductors BAX14 Datasheet HTML 5Page - NXP Semiconductors BAX14 Datasheet HTML 6Page - NXP Semiconductors BAX14 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Sep 17
2
Philips Semiconductors
Product specification
General purpose diode
BAX14
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 20 V
• Repetitive peak reverse voltage:
max. 40 V
• Repetitive peak forward current:
max. 2 A.
APPLICATIONS
• Low-voltage switching
• Rectifier applications
• Low-voltage stabilizing.
DESCRIPTION
The BAX14 is a general purpose switching diode fabricated in planar
technology, and encapsulated in the hermetically sealed leaded glass SOD27
(DO-35) package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
40
V
VR
continuous reverse voltage
20
V
IF
continuous forward current
see Fig.2; note 1
500
mA
IFRM
repetitive peak forward current
2000
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
55
A
t = 100
µs
15
A
t = 10 ms
9A
Ptot
total power dissipation
Tamb =25 °C; note 1
450
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
200
°C


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