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BAX12 数据表(PDF) 4 Page - NXP Semiconductors |
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BAX12 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 1996 Sep 17 4 Philips Semiconductors Product specification Controlled avalanche diode BAX12 GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 200 400 500 300 200 0 100 MBG455 Tamb ( oC) IF (mA) Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 012 600 0 200 400 MBG463 VF (V) IF (mA) (1) (2) (3) (1) Tj = 175 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj =25 °C prior to surge. handbook, full pagewidth MBG702 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 |
类似零件编号 - BAX12 |
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类似说明 - BAX12 |
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