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BAX12 数据表(PDF) 3 Page - NXP Semiconductors |
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BAX12 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1996 Sep 17 3 Philips Semiconductors Product specification Controlled avalanche diode BAX12 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF =10mA − 750 mV IF =50mA − 840 mV IF = 100 mA − 900 mV IF = 200 mA − 1.0 V IF = 400 mA − 1.25 V IR reverse current see Fig.5 VR =90V − 100 nA VR = 90 V; Tj = 150 °C − 100 µA V(BR)R reverse avalanche breakdown voltage IR = 1 mA 120 170 V Cd diode capacitance f = 1 MHz; VR =0; see Fig.6 − 35 pF trr reverse recovery time when switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.10 − 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 375 K/W |
类似零件编号 - BAX12 |
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类似说明 - BAX12 |
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