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BAX12 数据表(PDF) 2 Page - NXP Semiconductors |
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BAX12 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 1996 Sep 17 2 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V • Repetitive peak reverse voltage: max. 90 V • Repetitive peak forward current: max. 800 mA • Repetitive peak reverse current: max. 600 mA • Capable of absorbing transients repetitively. APPLICATIONS • Switching of inductive loads in semi-electronic telephone exchanges. DESCRIPTION The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. Fig.1 Simplified outline (SOD27; DO35) and symbol. Marking code: BAX12. handbook, halfpage MAM246 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. It is allowed to exceed this value; see Figs 8 and 9. Care should be taken not to exceed the IRRM rating. 2. Device mounted on an FR4 printed circuit-board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage note 1 − 90 V VR continuous reverse voltage note 1 − 90 V IF continuous forward current see Fig.2; note 2 − 400 mA IFRM repetitive peak forward current − 800 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 55 A t = 100 µs − 15 A t = 10 ms − 9A Ptot total power dissipation Tamb =25 °C; note 2 − 450 mW IRRM repetitive peak reverse current − 600 mA ERRM repetitive peak reverse energy tp ≥ 50 µs; f ≤ 20 Hz; Tj =25 °C − 5.0 mJ Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C |
类似零件编号 - BAX12 |
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类似说明 - BAX12 |
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