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BAX12 数据表(PDF) 6 Page - NXP Semiconductors |
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BAX12 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 8 page 1996 Sep 17 6 Philips Semiconductors Product specification Controlled avalanche diode BAX12 Fig.8 Reverse current as a function of continuous reverse voltage. handbook, halfpage 100 200 600 0 200 400 MBG698 150 (1) (4) IR (mA) VR (V) (2) (3) Reverse voltages higher than the VR ratings are allowed, provided: a. The transient energy ≤ 7.5 mJ at PRRM ≤30 W; Tj =25 °C; the transient energy ≤ 5 mJ at PRRM = 120 W; Tj =25 °C (see Fig.7). b. T ≥ 50 ms; δ≤0.01 (rectangular waveform) (see Fig.9). δ≤0.02 (triangular waveform) (see Fig.9). With increasing temperature, the maximum permissible transient energy must be decreased by 0.03 mJ/K. (1) Tj =25 °C; minimum values. (2) Tj = 175 °C; minimum values. (3) Tj =25 °C; maximum values. (4) Tj = 175 °C; maximum values. Fig.9 Peak reverse voltage and current test pulses. handbook, halfpage MBG699 VR IR T time time t (rectangular waveform) t (triangular waveform) δ = t T |
类似零件编号 - BAX12 |
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类似说明 - BAX12 |
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