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BAX12 数据表(PDF) 5 Page - NXP Semiconductors

部件名 BAX12
功能描述  Controlled avalanche diode
Download  8 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BAX12 数据表(HTML) 5 Page - NXP Semiconductors

  BAX12 Datasheet HTML 1Page - NXP Semiconductors BAX12 Datasheet HTML 2Page - NXP Semiconductors BAX12 Datasheet HTML 3Page - NXP Semiconductors BAX12 Datasheet HTML 4Page - NXP Semiconductors BAX12 Datasheet HTML 5Page - NXP Semiconductors BAX12 Datasheet HTML 6Page - NXP Semiconductors BAX12 Datasheet HTML 7Page - NXP Semiconductors BAX12 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Sep 17
5
Philips Semiconductors
Product specification
Controlled avalanche diode
BAX12
Fig.5 Reverse current as a function of junction temperature.
handbook, full pagewidth
0
100
200
10
102
104
103
105
106
107
MBG696
IR
(nA)
Tj (
oC)
VR =90V.
Solid line; maximum values. Dotted line; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj =25 °C.
handbook, halfpage
010
20
30
VR (V)
40
Cd
(pF)
30
10
0
20
MGD003
Fig.7
Maximum permissible repetitive peak
reverse power as a function of the pulse
duration T
≥ 50 ms; Tj =25 °C.
Solid line; rectangular waveform;
δ≤ 0.01.
Dotted line; triangular waveform;
δ≤ 0.02.
(1) Limited by IRMM = 600 mA.
handbook, half age
MBG701
10−1
110
1
10
102
103
10−2
PRRM
(W)
t (ms)
(1)


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