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BAX12 数据表(PDF) 5 Page - NXP Semiconductors |
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BAX12 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 8 page 1996 Sep 17 5 Philips Semiconductors Product specification Controlled avalanche diode BAX12 Fig.5 Reverse current as a function of junction temperature. handbook, full pagewidth 0 100 200 10 102 104 103 105 106 107 MBG696 IR (nA) Tj ( oC) VR =90V. Solid line; maximum values. Dotted line; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 010 20 30 VR (V) 40 Cd (pF) 30 10 0 20 MGD003 Fig.7 Maximum permissible repetitive peak reverse power as a function of the pulse duration T ≥ 50 ms; Tj =25 °C. Solid line; rectangular waveform; δ≤ 0.01. Dotted line; triangular waveform; δ≤ 0.02. (1) Limited by IRMM = 600 mA. handbook, half age MBG701 10−1 110 1 10 102 103 10−2 PRRM (W) t (ms) (1) |
类似零件编号 - BAX12 |
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类似说明 - BAX12 |
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