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BAW62 数据表(PDF) 3 Page - NXP Semiconductors |
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BAW62 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 1996 Sep 17 3 Philips Semiconductors Product specification High-speed diode BAW62 ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board without metallization pad. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 5 mA 620 750 mV IF = 100 mA − 1000 mV IF = 100 mA; Tj = 100 °C − 930 mV IR reverse current see Fig.5 VR =20V − 25 nA VR =50V − 200 nA VR =75V − 5 µA VR =20V; Tj = 150 °C − 50 µA VR =75V; Tj = 150 °C − 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 − 2pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 − 4ns Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 − 2.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W |
类似零件编号 - BAW62 |
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类似说明 - BAW62 |
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