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BAW62 数据表(PDF) 5 Page - NXP Semiconductors |
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BAW62 数据表(HTML) 5 Page - NXP Semiconductors |
5 / 7 page 1996 Sep 17 5 Philips Semiconductors Product specification High-speed diode BAW62 Fig.5 Reverse current as a function of junction temperature. (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. handbook, halfpage 0 100 Tj ( oC) 200 103 102 10−1 10−2 10 (1) (2) 1 IR ( µA) MGD006 (3) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 010 20 1.2 1.0 0.6 0.4 0.8 MGD004 VR (V) Cd (pF) |
类似零件编号 - BAW62 |
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类似说明 - BAW62 |
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