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BAT160C 数据表(PDF) 4 Page - NXP Semiconductors |
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BAT160C 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1999 Sep 20 4 Philips Semiconductors Product specification Schottky barrier double diodes BAT160 series GRAPHICAL DATA handbook, halfpage 0.8 0.4 0.2 0 VF (V) IF (mA) 0.6 104 103 102 10 1 MCD784 (1) (3) (2) (4) (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb =75 °C. (4) Tamb =25 °C. Fig.5 Forward current as a function of forward voltage; typical values. handbook, halfpage 60 40 20 0 (3) VR (V) MCD768 104 105 103 102 10 IR ( µA) 1 10−1 (1) (2) (4) (1) Tamb = 125 °C. (2) Tamb = 100 °C. (3) Tamb =75 °C. (4) Tamb =25 °C. Fig.6 Reverse current as a function of reverse voltage; typical values. handbook, halfpage 0 VR (V) 20 40 60 103 102 10 Cd (pF) MCD766 Fig.7 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C. |
类似零件编号 - BAT160C |
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类似说明 - BAT160C |
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