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BAQ806 数据表(PDF) 7 Page - NXP Semiconductors |
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BAQ806 数据表(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 1998 Aug 03 7 Philips Semiconductors Product specification AM PIN diode BAQ806 Fig.13 Charge carrier life time test circuit and definition. Input impedance oscilloscope: 1 M Ω, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. handbook, full pagewidth MGG506 10 Ω 10 µF 10 mA DUT τ 6 0 10 I F (mA) 10% t 90% I R (mA) pulse f = 1 kHz Fig.14 Diode forward resistance test circuit. IF (mA) R1 (Ω)R2 (kΩ) 0.1 3000 100 1 300 10 10 30 1 handbook, halfpage MGG507 R1 R2 IF 50 Ω 50 Ω 1 µF Vin Vout 100 kHz 11 V DUT Fig.15 Printed-circuit board for surface mounting. Dimensions in mm. MSB213 4.5 2.5 1.25 50 50 |
类似零件编号 - BAQ806 |
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类似说明 - BAQ806 |
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