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STB130NH02L 数据表(PDF) 11 Page - STMicroelectronics |
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STB130NH02L 数据表(HTML) 11 Page - STMicroelectronics |
11 / 13 page 11/13 STB130NH02L STP130NH02L High Side Switch (SW1) Low Side Switch (SW2) conduction P δ * I * R 2 L DS(on)SW1 ) 1 ( * I * R 2 L DS(on)SW2 δ − switching P g L I I * f * ) Q (Q * V gd(SW1) gsth(SW1) in + Zero Voltage Switching Recovery Not Applicable 1 f * Q * V rr(SW2) in diode P Conduction Not Applicable f * t * I * V deadtime L f(SW2) ) gate(Q G P f * V * Q gg g(SW1) f * V * Q gg gls(SW2) Qoss P 2 f * Q * V oss(SW1) in 2 f * Q * V oss(SW2) in Parameter Meaning d Duty-cycle Qgsth Post threshold gate charge Qgls Third quadrant gate charge Pconduction On state losses Pswitching On-off transition losses Pdiode Conduction and reverse recovery diode losses Pgate Gate drive losses Qoss P Output capacitance losses 1 Dissipated by SW1 during turn-on |
类似零件编号 - STB130NH02L |
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类似说明 - STB130NH02L |
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