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IRLR8713PBF 数据表(PDF) 2 Page - International Rectifier |
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IRLR8713PBF 数据表(HTML) 2 Page - International Rectifier |
2 / 10 page IRLR/U8713PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 16 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 3.8 4.8 m Ω ––– 5.0 6.3 VGS(th) Gate Threshold Voltage 1.35 1.85 2.35 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 79 ––– ––– S Qg Total Gate Charge ––– 17.4 26 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– nC Qgd Gate-to-Drain Charge ––– 5.8 ––– Qgodr Gate Charge Overdrive ––– 5.4 ––– See Fig.16 Qsw Switch Charge (Qgs2 + Qgd) ––– 8.0 ––– Qoss Output Charge ––– 8.6 ––– nC RG Gate Resistance ––– 0.9 1.6 Ω td(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 24 ––– td(off) Turn-Off Delay Time ––– 12 ––– ns tf Fall Time ––– 5.9 ––– Ciss Input Capacitance ––– 2240 ––– Coss Output Capacitance ––– 580 ––– pF Crss Reverse Transfer Capacitance ––– 270 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 100 f (Body Diode) A ISM Pulsed Source Current ––– ––– 410 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 16 24 ns Qrr Reverse Recovery Charge ––– 15 23 nC ton Forward Turn-On Time VDS = VGS, ID = 50µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C Conditions 8.1 Max. 190 17 ƒ = 1.0MHz ID = 17A VDS = 13V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 21A e VGS = 4.5V, ID = 17A e VGS = 20V VGS = -20V VDS = 13V, ID = 17A VDS = 10V, VGS = 0V VDD = 13V, VGS = 4.5V e Clamped Inductive Load TJ = 25°C, IF = 17A, VDD = 13V di/dt = 300A/µs e TJ = 25°C, IS = 17A, VGS = 0V e showing the integral reverse p-n junction diode. Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) MOSFET symbol ––– VGS = 4.5V Typ. ––– ––– ID = 17A VGS = 0V VDS = 13V |
类似零件编号 - IRLR8713PBF |
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类似说明 - IRLR8713PBF |
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