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SS8050 数据表(PDF) 1 Page - Weitron Technology |
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SS8050 数据表(HTML) 1 Page - Weitron Technology |
1 / 4 page http://www.weitron.com.tw WEITRON SS8050 NPN General Purpose Transistors TO-92 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) Characteristics Symbol Unit Min Typ Max Collector cut-off current Emitter cut-off current VCE=20V, IE=0 VCB=40V, IE=0 Emitter cut-off current VEB=5V, IC=0 ICBO ICEO IEBO - - µA µA 0.1 0.1 - µA 0.1 Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC=0.1mA, IB=0 IC=100µA, IE=0 Emitter Base Breakdown Voltage IE=100µA, IC=0 V(BR)CBO V(BR)CEO 40 25 V V - - V(BR)EBO 5 - - - - - - V - MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Junction and Storage, Temperature TJ,Tstg -55 to +150 °C Collector Current-Continuous IC 1.5 A Total Device Dissipation TA=25°C PD 1.0 W Emitter-Base Voltage VEBO 5 V Collector-Emitter Voltage VCEO 25 V Collector-Base Voltage Rating Symbol Value Unit VCBO 40 V 1/4 19-Jul-05 Lead(Pb)-Free P b |
类似零件编号 - SS8050 |
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类似说明 - SS8050 |
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