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SS8050 数据表(PDF) 1 Page - Weitron Technology

部件名 SS8050
功能描述  NPN General Purpose Transistors
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制造商  WEITRON [Weitron Technology]
网页  http://www.weitron.com.tw
标志 WEITRON - Weitron Technology

SS8050 数据表(HTML) 1 Page - Weitron Technology

  SS8050 Datasheet HTML 1Page - Weitron Technology SS8050 Datasheet HTML 2Page - Weitron Technology SS8050 Datasheet HTML 3Page - Weitron Technology SS8050 Datasheet HTML 4Page - Weitron Technology  
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WEITRON
SS8050
NPN General Purpose Transistors
TO-92
1
2
3
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted)
Characteristics
Symbol
Unit
Min
Typ
Max
Collector cut-off current
Emitter cut-off current
VCE=20V, IE=0
VCB=40V, IE=0
Emitter cut-off current
VEB=5V, IC=0
ICBO
ICEO
IEBO
-
-
µA
µA
0.1
0.1
-
µA
0.1
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
IC=0.1mA, IB=0
IC=100µA, IE=0
Emitter Base Breakdown Voltage
IE=100µA, IC=0
V(BR)CBO
V(BR)CEO
40
25
V
V
-
-
V(BR)EBO
5
-
-
-
-
-
-
V
-
MAXIMUM RATINGS(TA=25˚C unless otherwise noted)
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
°C
Collector Current-Continuous
IC
1.5
A
Total Device Dissipation TA=25°C
PD
1.0
W
Emitter-Base Voltage
VEBO
5
V
Collector-Emitter Voltage
VCEO
25
V
Collector-Base Voltage
Rating
Symbol
Value
Unit
VCBO
40
V
1/4
19-Jul-05
Lead(Pb)-Free
P b


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