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GS81032AT-5 数据表(PDF) 10 Page - GSI Technology |
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GS81032AT-5 数据表(HTML) 10 Page - GSI Technology |
10 / 23 page Rev: 1.01 7/2001 10/23 © 2000, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS81032AT/Q-150/138/133/117/100/66 Note: This parameter is sample tested. Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper- ature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87. 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1. 4. For x18 configuration, consult factory. Capacitance ( TA = 25oC, f = 1 MHZ, VDD = 3.3 V) Parameter Symbol Test conditions Typ. Max. Unit Control Input Capacitance CI VDD = 3.3 V 3 4 pF Input Capacitance CIN VIN = 0 V 4 5 pF Output Capacitance COUT VOUT = 0V 6 7 pF Package Thermal Characteristics Rating Layer Board Symbol TQFP Max QFP Max Unit Notes Junction to Ambient (at 200 lfm) single RΘJA 40 TBD °C/W 1,2,4 Junction to Ambient (at 200 lfm) four RΘJA 24 TBD °C/W 1,2,4 Junction to Case (TOP) RΘJC 9 TBD °C/W 3,4 20% tKC VSS – 2.0 V 50% VSS VIH Undershoot Measurement and Timing Overshoot Measurement and Timing 20% tKC VDD + -2.0 V 50% VDD VIL |
类似零件编号 - GS81032AT-5 |
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类似说明 - GS81032AT-5 |
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