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GS8180DV18D-250I 数据表(PDF) 11 Page - GSI Technology |
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GS8180DV18D-250I 数据表(HTML) 11 Page - GSI Technology |
11 / 28 page GS8180DV18D-250/200/167/133/100 Rev: 2.04 4/2005 11/28 © 2002, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. State Diagram Power- Read NOP Load New Read Address R Count = 0 DDR Read R Count = R Count + 1 Write NOP Load New Write Address W Count = 0 DDR Write W Count = W Count + 1 WRITE READ READ R Count = 2 WRITE W Count = 2 READ WRITE Always Always READ R Count = 2 Notes: 1. Internal burst counter is fixed as 2-bit linear (i.e., when first address is A0+), next internal burst address is A0+1. 2. “READ” refers to read active status with R = Low, “READ” refers to read inactive status with R = High. The same is true for “WRITE” and “WRITE”. 3. Read and write state machine can be active simultaneously. 4. State machine control timing sequence is controlled by K. 5. R Count is the read counter; Burst of 4 must complete 2 DDR reads. 6. W Count is the write counter; Burst of 4 must complete 2 DDR writes. READ R Count = 1 Always Increment Read Address WRITE W Count = 2 Increment Write Address WRITE W Count = 1 Always |
类似零件编号 - GS8180DV18D-250I |
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类似说明 - GS8180DV18D-250I |
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