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GS8160Z18BT-200V 数据表(PDF) 4 Page - GSI Technology

部件名 GS8160Z18BT-200V
功能描述  18Mb Pipelined and Flow Through Synchronous NBT SRAM
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制造商  GSI [GSI Technology]
网页  http://www.gsitechnology.com
标志 GSI - GSI Technology

GS8160Z18BT-200V 数据表(HTML) 4 Page - GSI Technology

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100-Pin TQFP Pin Descriptions
Symbol
Type
Description
A0, A1
In
Burst Address Inputs; Preload the burst counter
A
In
Address Inputs
CK
In
Clock Input Signal
BA
In
Byte Write signal for data inputs DQA1-DQA9; active low
BB
In
Byte Write signal for data inputs DQB1-DQB9; active low
BC
In
Byte Write signal for data inputs DQC1-DQC9; active low
BD
In
Byte Write signal for data inputs DQD1-DQD9; active low
W
In
Write Enable; active low
E1
In
Chip Enable; active low
E2
In
Chip Enable; Active High. For self decoded depth expansion
E3
In
Chip Enable; Active Low. For self decoded depth expansion
G
In
Output Enable; active low
ADV
In
Advance/Load; Burst address counter control pin
CKE
In
Clock Input Buffer Enable; active low
NC
No Connect
DQA
I/O
Byte A Data Input and Output pins
DQB
I/O
Byte B Data Input and Output pins
DQC
I/O
Byte C Data Input and Output pins
DQD
I/O
Byte D Data Input and Output pins
ZZ
In
Power down control; active high
FT
In
Pipeline/Flow Through Mode Control; active low
LBO
In
Linear Burst Order; active low
VDD
In
Core power supply
VSS
In
Ground
VDDQ
In
Output driver power supply
GS8160ZxxBT-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 5/2006
4/22
© 2004, GSI Technology


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