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TLZ2V7B 数据表(PDF) 1 Page - Vishay Siliconix |
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TLZ2V7B 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 9 page TLZ... Vishay Semiconductors Rev. A4, 08-JAug-02 1 (9) www.vishay.com Document Number 85635 Z–Diodes Features D Very sharp reverse characteristic D Low reverse current level D Available with tighter tolerances D Very high stability D Low noise D Silicon Epitaxial Planar D High reliability Applications Voltage stabilization Order Instruction Type Ordering Code Remarks TLZ2V4 TLZ2V4–GS08 Tape and Reel (2.500 pcs) TLZ2V4 TLZ2V4–GS18 Tape and Reel (10.000 pcs) Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Power dissipation RthJAx300K/W PV 500 mW Z–current IZ PV/VZ mA Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50 mmx50 mmx1.6 mm RthJA 500 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200mA VF 1.5 V |
类似零件编号 - TLZ2V7B |
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类似说明 - TLZ2V7B |
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