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ADXL330KCPZ 数据表(PDF) 4 Page - Analog Devices

部件名 ADXL330KCPZ
功能描述  Small, Low Power, 3-Axis 짹3 g i MEMS Accelerometer
Download  16 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADXL330KCPZ 数据表(HTML) 4 Page - Analog Devices

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ADXL330
Rev. 0 | Page 4 of 16
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Acceleration (Any Axis, Unpowered)
10,000 g
Acceleration (Any Axis, Powered)
10,000 g
VS
−0.3 V to +7.0 V
All Other Pins
(COM − 0.3 V) to (VS + 0.3 V)
Output Short-Circuit Duration
(Any Pin to Common)
Indefinite
Temperature Range (Powered)
−55°C to +125°C
Temperature Range (Storage)
−65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
tP
tL
t25°C TO PEAK
tS
PREHEAT
CRITICAL ZONE
TL TO TP
TIME
RAMP-DOWN
RAMP-UP
TSMIN
TSMAX
TP
TL
Figure 2. Recommended Soldering Profile
Table 3. Recommended Soldering Profile
Profile Feature
Sn63/Pb37
Pb-Free
Average Ramp Rate (TL to TP)
3°C/s max
3°C/s max
Preheat
Minimum Temperature (TSMIN)
100°C
150°C
Maximum Temperature (TSMAX)
150°C
200°C
Time (TSMIN to TSMAX), tS
60 s to 120 s
60 s to 180 s
TSMAX to TL
Ramp-Up Rate
3°C/s max
3°C/s max
Time Maintained Above Liquidous (TL)
Liquidous Temperature (TL)
183°C
217°C
Time (tL)
60 s to 150 s
60 s to 150 s
Peak Temperature (TP)
240°C + 0°C/−5°C
260°C + 0°C/−5°C
Time within 5°C of Actual Peak Temperature (tP)
10 s to 30 s
20 s to 40 s
Ramp-Down Rate
6°C/s max
6°C/s max
Time 25°C to Peak Temperature
6 minutes max
8 minutes max
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.


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