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1PS89SS04 数据表(PDF) 6 Page - NXP Semiconductors |
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1PS89SS04 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 1999 Jun 08 6 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04; 1PS89SS05; 1PS89SS06 Fig.10 Reverse recovery voltage test circuit and waveforms. (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. handbook, full pagewidth t rr (1) I F t output signal t r t t p 10% 90% VR input signal V = V I x R RF S R = 50 S Ω IF D.U.T. R = 50 i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.11 Forward recovery voltage test circuit and waveforms. Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ≤ 0.005. t r t t p 10% 90% I input signal R = 50 S Ω I R = 50 i Ω OSCILLOSCOPE Ω 1 k Ω 450 D.U.T. MGA882 V fr t output signal V |
类似零件编号 - 1PS89SS04 |
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类似说明 - 1PS89SS04 |
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