SI5445BDC datasheet(1/1 Pages) VISHAY

部件名	SI5445BDC

功能描述	P-Channel, 1.8-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Specification Comparison

Vishay Siliconix

Document Number 74051

www.vishay.com

14-Apr-05

Si5445BDC vs. Si5445DC

Description:

P-Channel, 1.8-V (G-S) MOSFET

Package:

1206-8 ChipFET

®

Pin Out:

Identical

Part Number Replacements:

Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3

Si5445BDC-T1-E3 Replaces Si5445DC-T1

Summary of Performance:

The Si5445BDC is the replacement to the original Si5445DC; both parts perform identically, including limits to the parametric

tables below.

ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

Si5445BDC

Si5445DC

Unit

Drain-Source Voltage

VDS

-8

Gate-Source Voltage

VGS

+8

V

TA = 25°C

-7.1

Continuous Drain Current

TA = 70°C

ID

-5.2

Pulsed Drain Current

IDM

-20

Continuous Source Current

(MOSFET Diode Conduction)

IS

-2.1

A

TA = 25°C

2.5

Power Dissipation

TA = 70°C

PD

1.3

W

Operating Junction & Storage Temperature Range

Tj & Tstg

-55 to 150

°C

Maximum Junction-to-Ambient

RthJA

50

°C/W

SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED)

Si5445BDC

Si5445DC

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Static

Gate-Threshold Voltage

VGS(th)

-0.45

-1.0

-0.45

NS

V

Gate-Body Leakage

IGSS

+100

nA

Zero Gate Voltage Drain Current

IDSS

-1

µA

On-State Drain Current

VGS = -4.5 V

ID(on)

-20

A

VGS= -4.5 V

0.027

0.033

0.030

0.035

VGS = -2.5 V

0.035

0.043

0.040

0.047

Drain-Source On-Resistance

VGS = -1.8 V

rDS(on)

0.050

0.060

0.052

0.062

Ω

Forward Transconductance

gfs

18

S

Diode Forward Voltage

VSD

-0.8

-1.2

-0.8

-1.2

V

Dynamic

Total Gate Charge

Qg

14

21

17

26

Gate-Source Charge

Qgs

1.8

2.8

Gate-Drain Charge

Qgd

3.3

2.6

nC

Gate Resistance

Rg

8

NS

Ω

Switching

td(on)

12

20

15

25

Turn-On Time

tr

22

35

45

70

td(off)

75

115

110

165

Turn-Off Time

tf

50

75

65

100

Source-Drain Reverse Recovery Time

trr

75

115

30

60

ns

类似零件编号 - SI5445BDC

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI5445BDC	94Kb / 6P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 24-Jan-05
	SI5445BDC-T1-E3	94Kb / 6P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 24-Jan-05
	SI5445BDC	94Kb / 6P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 24-Jan-05

More results

类似说明 - SI5445BDC

制造商	部件名	数据表	功能描述
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	SI6467BDQ	196Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05
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	SI1407DL	64Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 17-Jul-00
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Vishay Siliconix	SI6467BDQ-T1-E3	208Kb / 11P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 31-Mar-08
Vishay Siliconix	SI2315BDS	181Kb / 8P	P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022