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SI5445BDC 数据表(PDF) 1 Page - Vishay Siliconix |
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SI5445BDC 数据表(HTML) 1 Page - Vishay Siliconix |
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1 / 1 page Specification Comparison Vishay Siliconix Document Number 74051 www.vishay.com 14-Apr-05 Si5445BDC vs. Si5445DC Description: P-Channel, 1.8-V (G-S) MOSFET Package: 1206-8 ChipFET ® Pin Out: Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1 Summary of Performance: The Si5445BDC is the replacement to the original Si5445DC; both parts perform identically, including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol Si5445BDC Si5445DC Unit Drain-Source Voltage VDS -8 -8 Gate-Source Voltage VGS +8 +8 V TA = 25°C -7.1 -7.1 Continuous Drain Current TA = 70°C ID -5.2 -5.2 Pulsed Drain Current IDM -20 -20 Continuous Source Current (MOSFET Diode Conduction) IS -2.1 -2.1 A TA = 25°C 2.5 2.5 Power Dissipation TA = 70°C PD 1.3 1.3 W Operating Junction & Storage Temperature Range Tj & Tstg -55 to 150 -55 to 150 °C Maximum Junction-to-Ambient RthJA 50 50 °C/W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Si5445BDC Si5445DC Parameter Symbol Min Typ Max Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) -0.45 -1.0 -0.45 NS V Gate-Body Leakage IGSS +100 +100 nA Zero Gate Voltage Drain Current IDSS -1 -1 µA On-State Drain Current VGS = -4.5 V ID(on) -20 -20 A VGS= -4.5 V 0.027 0.033 0.030 0.035 VGS = -2.5 V 0.035 0.043 0.040 0.047 Drain-Source On-Resistance VGS = -1.8 V rDS(on) 0.050 0.060 0.052 0.062 Ω Forward Transconductance gfs 18 18 S Diode Forward Voltage VSD -0.8 -1.2 -0.8 -1.2 V Dynamic Total Gate Charge Qg 14 21 17 26 Gate-Source Charge Qgs 1.8 2.8 Gate-Drain Charge Qgd 3.3 2.6 nC Gate Resistance Rg 8 NS Ω Switching td(on) 12 20 15 25 Turn-On Time tr 22 35 45 70 td(off) 75 115 110 165 Turn-Off Time tf 50 75 65 100 Source-Drain Reverse Recovery Time trr 75 115 30 60 ns |
类似零件编号 - SI5445BDC |
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类似说明 - SI5445BDC |
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