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Thermal Resistance
Symbol
Parameter
DPAK
Ratings
Units
R
ΘJA
Thermal Resistance Junction-to-Ambient
80
°C/W
R
ΘJC
Thermal Resistance Junction-to-Case
1.56
°C/W
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The
φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Units
Static
BVDSX
Breakdown Voltage
Drain to Source
ID = 0.5 mA
VGS= -4 V
24
28
V
BVGDO
Breakdown Voltage
Gate to Drain
IG = -50µA
-32
-28
V
BVGSO
Breakdown Voltage
Gate to Source
IG = -50µA
-14
-12
V
RDS(ON)
Drain to Source On
Resistance2
IG = 40 mA, ID=10A
IG = 10 mA, ID=10A
IG = 5 mA, ID=10A
3.7
3.8
3.9
4.5
5.0
m
Ω
m
Ω
VGS(TH)
Gate Threshold Voltage
VDS=0.1 V, ID=250µA
-1
V
TCVGSTH
Temperature Coefficient of
Gate Threshold Voltage
VDS=0.1 V, ID=250µA
-2.8
mV/oC
Dynamic
QGsync
Total Gate Charge Sync JFET
∆VDrive =5V,VDS=0.1V
12.6
nC
QG
Total Gate Charge
∆VDrive =5V, ID=10A,VDS=15V
15
nC
QGD
Gate to Drain Charge
VDS=13.5V to VDS=1.5V
10.5
nC
QGS
Gate to Source Charge
VGS =-4.5V to VDS=13.5V
4.5
nC
QSW
Switching Charge
VGS =-2V to VDS=1.5V
11.4
nC
RG
Gate Resistance
0.4
Ω
TD(ON)
Turn-on Delay Time
6.7
TR
Rise Time
12.4
TD(OFF)
Turn-off Delay
9
TF
Fall Time
VDD=15V, ID=10A
VDrive = 5 V
Resistive Load
4.6
ns
CISS
Input Capacitance
1465
COSS
Output Capacitance
611
CGS
Gate-Source Capacitance
972
CGD
Gate-Drain Capacitance
493
CDS
Drain-Source Capacitance
VDS=10V, VGS= -5 V, 1MHz.
118
pF
PN Diode
IR
Reverse Leakage
VR=20V, Vgs = -4V
0.3
mA
VF
Forward Voltage
IF = 1 A
800
mV
VF
Forward Voltage
IF = 10 A
900
mV
VF
Forward Voltage
IF = 20 A
960
mV
Qrr
Reverse Recovery Charge
Is = 10 A di/dt = 100A/us,
9.5
nC
Trr
Reverse Recovery Time
Is = 10 A di/dt = 100A/us,
14.6
ns
Notes:
1. Current is limited by bondwire; with an Rthjc = 1.56 oC/W the chip is able to carry 102A.
2. Pulse width <= 500µs, duty cycle < = 2%
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010DA
Product Specification
2