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STU3055NL 数据表(PDF) 1 Page - SamHop Microelectronics Corp. |
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STU3055NL 数据表(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page 25 N-Channel E nhancement Mode Field E ffect Transistor TO-252 and TO-251 Package. AB S OLUTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS 20 V Drain Current-Continuous @ TJ=125 C -Pulsed ID 21 20 50 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 175 C a a a b (300ms Pulse Width) S amHop Microelectronics C orp. P reliminary May.28,2004 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) Max 25V 21A 40@ V GS = 10V 50@ V GS = 4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S G D S TU S E R IE S TO-252AA(D-PAK) S TU S E R IE S TO-251(l-PAK) G G S S D D S T U/D3055NL THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC 3 50 R JA /W C /W C 52 |
类似零件编号 - STU3055NL |
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类似说明 - STU3055NL |
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