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SI7403BDN 数据表(PDF) 1 Page - Vishay Siliconix |
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SI7403BDN 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 8 page FEATURES D TrenchFETr Power MOSFET: 2.5-V Rated D RoHS Compliant D New PowerPAKr Package − Low Thermal Resistance − Low 1.07-mm Profile APPLICATIONS D Load Switching D PA Switching Product Is Completely Pb-free Si7403BDN Vishay Siliconix New Product Document Number: 73333 S-50519—Rev. A, 21-Mar-05 www.vishay.com 1 P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) −20 0.074 @ VGS = −4.5 V −8c 5 6 nC −20 0.110 @ VGS = −2.5 V −7.4 5.6 nC Ordering Information: Si7403BDN-T1—E3 S G D P-Channel MOSFET 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS −20 V Gate-Source Voltage VGS "8 V TC = 25_C −8c Continuous Drain Current (TJ = 150_C)a, b TC = 70_C ID −7.2 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C ID −5.1a, b, TA = 70_C −4.1a, b A Pulsed Drain Current IDM −20 Continuous Source Drain Diode Currenta, b TC = 25_C IS −8 Continuous Source-Drain Diode Currenta, b TA = 25_C IS −2.6a, b TC = 25_C 9.6 Maximum Power Dissipationa, b TC = 70_C PD 6.1 W Maximum Power Dissipationa, b TA = 25_C PD 3.1a, b W TA = 70_C 2a, b Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C Soldering Recommendations (Peak Temperature)c, d 260 _C Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. t = 5 sec c. Package limited. d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. |
类似零件编号 - SI7403BDN |
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类似说明 - SI7403BDN |
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